INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE AUIRGP4066D1 AUIRGP4066D1-E ? 09/20/11 E G n-channel C Features Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 S short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature Coefficient Soft Recovery Co-Pak Diode Tight parameter distribution Lead-Free, RoHS Compliant Automotive Qualified * Benefits High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI AUTOMOTIVE GRADE GC E GateCollectorEmitter TO-247AC AUIRGP4066D1 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted?and still air conditions. Ambient temperature (TA) is 25?C, unless otherwise specified. VCES = 600V IC(Nominal) = 75A tSC 5s, TJ(max) = 175C VCE(on) typ. = 1.70V ParameterMax.Units VCESCollector-to-Emitter Voltage600V IC TC = 25CContinuous Collector Current140 IC TC = 100CContinuous Collector Current90 INOMINALNominal Current75 ICMPulse Collector Current VGE = 15V225 ILMClamped Inductive Load Current VGE = 20V ?300A IF TC = 25CDiode Continous Forward Current140 IF TC = 100CDiode Continous Forward Current90 IFM Diode Maximum Forward Current ?300 VGEContinuous Gate-to-Emitter Voltage 20V Transient Gate-to-Emitter Voltage 30 PD TC = 25CMaximum Power Dissipation454W PD TC = 100CMaximum Power Dissipation227 TJOperating Junction and-55 to +175 TSTGStorage Temperature RangeC Soldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw10 lbfin (1.1 Nm) Thermal Resistance ParameterMin.Typ.Max. Units RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ? 0.33 C/W RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode)? 0.53 RCS Thermal Resistance, Case-to-Sink (flat, greased surface)0.24 RJA Thermal Resistance, Junction-to-Ambient (typical socket mount)40 TO-247AD AUIRGP4066D1-E G C E C C E C G AUIRGP4066D1/AUIRP4066D1-E Notes: ?VCC = 80% (VCES), VGE = 20V, L = 100H, RG = 10. ?Pulse width limited by max. junction temperature. ?Refer to AN-1086 for guidelines for measuring V(BR)CES safely. ?R is measured at TJ of approximately 90C. Electrical Characteristics TJ = 25C (unless otherwise specified) ParameterMin.Typ.Max.Units Conditions V(BR)CESCollector-to-Emitter Breakdown Voltage 600VVGE = 0V, IC = 200A ? V(BR)CES/TJTemperature Coeff. of Breakdown Voltage0.78V/CVGE = 0V, IC = 10mA (25C-175C) 1.702.1IC = 75A, VGE = 15V, TJ = 25C ? VCE(on)Collector-to-Emitter Saturation Voltage 2.0VIC = 75A, VGE = 15V, TJ = 150C? 2.1IC = 75A, VGE = 15V, TJ = 175C? VGE(th)Gate Threshold Voltage4.06.5VVCE = VGE, IC = 2.1mA VGE(th)/TJ Threshold Voltage temp. coefficient-21mV/C VCE = VGE, IC = 2.1mA (25C - 175C) gfeForward Transconductance50SVCE = 50V, IC = 75A, PW = 25s ICESCollector-to-Emitter Leakage Current3.0200AVGE = 0V, VCE = 600V 10mAVGE = 0V, VCE = 600V, TJ = 175C VFMDiode Forward Voltage Drop1.601.77VIF = 75A 1.54IF = 75A, TJ = 175C IGESGate-to-Emitter Leakage Current 100nAVGE = 20V Switching Characteristics TJ = 25C (unless otherwise specified) ParameterMin.Typ.Max.Units QgTotal Gate Charge (turn-on)150225IC = 75A QgeGate-to-Emitter Charge (turn-on)4060nCVGE = 15V QgcGate-to-Collector Charge (turn-on)6090VCC = 400V EonTurn-On Switching Loss42405190IC = 75A, VCC = 400V, VGE = 15V EoffTurn-Off Switching Loss21703060JRG = 10, L = 100H, TJ = 25C EtotalTotal Switching Loss64108250Energy losses include tail VGE =15V Fig. 4 - Reverse Bias SOA TJ = 175C; VGE =20V Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 60s Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 60s 101001000 VCE (V) 1 10 100 1000 IC (A) 1101001000 VCE (V) 0.1 1 10 100 1000 IC (A) 10sec 100sec Tc = 25C Tj = 175C Single Pulse DC 1msec 255075100125150175 TC (C) 0 20 40 60 80 100 120 140 IC (A) 0246810 VCE (V) 0 50 100 150 200 250 300 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 0246810 VCE (V) 0 50 100 150 200 250 300 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 255075100125150175 TC (C) 0 100 200 300 400 500 Ptot (W) AUIRGP4066D1/AUIRGP4066D1-E 5 Fig. 8 - Typ. Diode Forward Characteristics tp = 60s Fig. 10 - Typical VCE vs. VGE TJ = 25C Fig. 11 - Typical VCE vs. VGE TJ = 1