6.0 HY1906P/B N-Channel Enhancement Mode MOSFET 1 Features 60V/120A, RDS(ON)=m (typ.) VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) www.hooyi.cc Power Management for Inverter Systems. Package Code Applications N-ChannelMOSFETG S D B: TO-263-2LP : TO-220FB-3L B HOOYI HOOYI HOOYI HY1906 reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Ordering and Marking Information Note:lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. defines “Green”to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). G : Lead Free Device P Date Code Assembly Material HOOYI YYXXXJWW GYYXXX WW HY1906 YYXXXJWW G TO-220FB-3L G DS TO-220FB-3L TO-263-2L G DS TO-263-2L Pin Description 141225 60 600* 380* 60 HY1906 2 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage 25 V TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25C 120 A Mounted on Large Heat Sink IDM TC=25C A TC=25C 120 ID Continuous Drain Current TC=100C 80 A TC=25C 188 PD Maximum Power Dissipation TC=100C 94 W RJC Thermal Resistance-Junction to Case 0.8 RJA Thermal Resistance-Junction to Ambient 62.5 C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH mJ Electrical Characteristics (TC = 25C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A - - V VDS=60V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85C - - 10 A VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250A 2 3 4 V IGSS Gate Leakage Current VGS=25V, VDS=0V - - 100 nA RDS(ON) Drain-Source On-state Resistance VGS=10V, IDS=60A - 6.0 7.5 m Diode Characteristics VSD Diode Forward Voltage ISD=60A, VGS=0V - 0.8 1.2 V trr Reverse Recovery Time - 50 - ns Qrr Reverse Recovery Charge ISD=60A, dlSD/dt=100A/s - 95 - nC Note： * Drain current is limited by junction temperature * VD=48V * Repetitive rating ; pulse width limiited by junction temperature Pulsed Drain Current * * * www.hooyi.cc HY1906P/B 276 26 1120 HY1906 3 Electrical Characteristics (Cont.) (TC = 25C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.0 - Ciss Input Capacitance - 4577 - Coss Output Capacitance - 876 - Crss Reverse Transfer Capacitance VGS=0V, VDS=25V, Frequency=1.0MHz - - pF td(ON) Turn-on Delay Time - 13 Tr Turn-on Rise Time - td(OFF) Turn-off Delay Time - 40 66 Tf Turn-off Fall Time - 60 95 ns Gate Charge Characteristics b Qg Total Gate Charge - 96 Qgs Gate-Source Charge - 21 - Qgd Gate-Drain Charge VDS=30V, VGS=10V, IDS=60A - 23 - nC Note * : Pulse test ; pulse width300s, duty cycle2%. VDD=30V, RG= 6 , IDS=60A, VGS=10V, - www.hooyi.cc HY1906P/B 4 Typical Operating Characteristics 100 80 160 120 200 20 Power Dissipation Ptot - Power (W) ID - Drain Current (A) Drain Current Safe Operation Area VDS-Drain -Source Voltage (V) ID - Drain Current (A) 020406080 100 120 140 160 180 200 0 40 TC=25oC 020406080 100 120 140 160 180 200 40 60 80 TC=25oC,VG=10V 240 limited by package 120 0.01110100 0.1 1 10 100 600 100us 1ms 10ms DC Rds(on) Limit TC=25oC Tc-Temperature (C)Tc-Case Temperature (C)Case www.hooyi.cc HY1906P/B 0.00010.0010.010.1110 0.001 0.01 0.1 1 Thermal Transient Impedance Square Wave PulseDuration (sec) Normalized Effective Transient 10 0.01 0.02 0.05 0.1 0.2 Duty = 0.5 Mounted on minimum pad RJA : 62.5oC/W Single 400 5 Typical Operating Characteristics (Cont.) 7 4 6 5 3.0 4.5 6.5 6.0 5.5 5.0 RDS(ON) - On - Resistance (m) Drain-Source On Resistance ID-Drain Current (A) VGS-Gate -Source Voltage (V) RDS(ON) - On - Resistance (m) Tj-Junction Temperature (C) Gate Threshold Voltage Normalized Threshold Vlotage Drain-Source On Resistance 45678910 IDS=60A -50 -250255075 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250A 020406080100 3.5 4.0 7.0 7.5 8.0 VGS=10V VDS-Drain-Source Voltage (V) ID - Drain Current (A) OutputCharacteristics 012345 0 20 40 60 80 100 120 140 160 5.5V 4.5V 6V 5V 4V VGS= 7