500 个论文写作常用词汇 常用连接词 1 energy separation energy difference between the quantum dot QD ground and first excited states 能量间隔 2 Analysis by Transmission Electron Microscopy TEM has identified 分析 3 Whilst 同时 4 Stacking Fault s SF and threading dislocations TD are often associated with the large lattice mismatch in most III V semiconductor films 与 有关 5 the GaAs barrier layer was divided in two parts 分割 6 a characteristic v shape gliding 有 特征 7 The presence of these SFs is observed to create surface QDs 被认为是 8 Areas 区域 9 extending to 延伸至 10 In contrast to 与 对比 11 we would suggest this could be related to 我们认为 12 dislocations occurring at the microscopic level 出现在 13 migrate away from 迁移开 14 spectral response 光谱响应 15 in terms of 根据 与 有关 16 composition content 组分 17 attracting strong interest 引起兴趣 18 aspects such as 许多方面例如 19 As previously reported 正如以前报道的 20 The emission wavelength of the QDs red shifted by 300 nm 红移了 300nm 21 As the composition is increased there is an increase in density and size 随着 增加什么增加 22 the reduction of PL intensity for larger compositions occurs as a result of threading dislocations being formed 23 suppressed by 压制 抑制 24 epilayer 外延层 25 variation 变化 26 interrupted growth method 间断生长 27 ion Ar laser with 514 53 nm 氩离子激光波长 28 it can be seen that 从 可以看出 29 reveal a strong quantum localization effect 展示 30 Such a blue shift in EL wavelength could be attributed to the band filling effect of localized energy states 蓝移 归咎于 能带填充效应 31 Ablueshift of 3 and 1 7 cm 1蓝移 32 Incorporating 结合 33 1 3 1 6mm has been achieved for InAs GaAs QDs by 实现 34 are limited by 性能局限于 35 received little attention to date 现在已经没人关注 36 spacer layer 隔离层 37 the initial 15 nm of the GaAs SPL was deposited at 5101C following which the temperature was increased to 580 1 C for the remainder of the GaAs SPL 随后 38 thermal escape 热逃逸 39 QD ensembles 量子点群 40 the value of EE 值 41 are dramatically reduced 巨大的 42 takes place 发生 出现 43 QD PL band caused by PL 图 引起 44 are taken into account 考虑 45 active region 活性区 46 vertical strain coupling 垂直耦合 47 sample c shows the highest value 75 meV followed by sample b with 60 meV and sample d with 56 meV 排序 48 is crucial for 对 至关重要 49 zero dimensional structures 零维结构 50 involving 涉及 51 cap layer 盖层 52 With an increase in the excitation power 20 mW to 100 mW there is an increase in the contribution related to the excited state of sample 53 one in which there are two families of QDs with different average sizes 一个 54 the thermal escape will produce a red shift of P2 emission band 产生红移 55 an order of magnitude lower 少一个数量级 56 Such phenomena support the hypothesis that 我们认为 57 made up of a sum of contributions of 什么的相互作用 58 With increasing temperature there may be a transfer of carriers from larger to smaller QDs 随着 增加 59 Aset of samples 一系列 60 epitaxy on 1 0 0 oriented 外延在 100 面 61 As one can see that 可以看出 62 PL spectra were fitted with a Gaussian profile 拟合 63 The smaller Stokes type shift combining with the narrow PL linewidth suggests that 两原因结合 说明了什么 64 is located at 能级位于 65 one can find that 可以看出 66 charge carriers 载流子 67 discrete energy level 离散能级 68 is strongly dependent on 取决于 69 ten layer stack 10 叠层 70 a new class of 一新类别 71 enable tailoring of the detection wavelength 能够对探测波长进行裁剪 72 bias dependence of the responsivity 响应率随偏压变化 73 escape routes 逃逸路线 74 dual color 双色 75 final states in the surrounding matrix 终态 76 a bias tunable energy separation 偏压可调的能级间隔 77 energy intervals 能级间隔 78 is assigned to 指定为 79 In Ga intermixing 互混 80 lateral size 横向尺寸 81 The volume of each QD is defined as hA 2 withA the area and h the height 定义什么为什么 82 capping layer 盖层 83 be of great potential for 有很大潜力 84 three dimensional carrier confinement of the QD 三维限制效应 3D confinement 85 interaction between 相互作用 86 suffer from 承受 sustain 87 spreads out to 传播到 88 The insert shows 插图说明 89 the increase of the quantum efficiency overcomes the increased dark current 超过 90 pushed the response peak toward 推向 91 wavefunction coupling 波长耦合 92 When positively biased 当正偏压时 93 artificial atom like 人工类原子 94 hybrid 混合 95 wavelength tuning 波长调制 96 significant impact on 有重要影响 97 i e QDs 例如 98 Top left panel shows 左上图说明了 99 photo excited carriers 光生载流子 100 be compensated in part by 部分 101 mesas 台面 102 blackbody source 黑体源 103 be coupled to 被耦合到 104 reflection grating 反射光栅 105 photolithographic techniques 光印刷技术 106 Indium bump 铟柱 107 bias range from to 范围 108 multi spectral response 多光谱响应 109 spectral tuning 光谱调制 110 adjacent to 临近 111 the tailoring of detection wavelength 探测波长裁剪 112 have an additional advantage of 优势 113 elevates 抬高 114 the splitting of the single detection peak 探测峰的劈裂 115 In principle 原则上 116 blocking layer 阻挡层 117 Additionally in addition 118 Relax selection rule 选择定则 119 phonon bottleneck effect 声子瓶颈效应 120 Systematic study of 系统研究了 121 Full width half maximum of the spectral response 半高宽 122 are of interest for several applications 有兴趣 123 outperform the ones in the market 胜过 pleted a detailed investigation of 研究了 125 b