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8Z 程宪章张忱(?0,?300192)K1:88K?Z?Zt。1oM:8;0;0L;0Wms|:TN304.9DSM:AcI|:1005-3077(2000)-03-44-06The Research Progress of Low DimensionSemiconductor MaterialsCHENG Xian-zhanZHANG Chen(Tianjin Electronic Materials Research Institute,Tianjin 300192)Abstract:The latest progress and trend in low dimension semiconductor materials are reviewed.Key words:low dimension semicomdutor materials;quantum dot;quantum wire;quantum well引言-,rBH,T/(island)ZT3。T0L1ZE4E、V3E|3E。0W3ZEMBEE、MOCVDEMOVPEE。2量子点材料2.1Si0(570 610)CVD(LPCVD)ESiH4Si,VSi3N4、SiO2SiOxNy3Si01 。L,SiH4Si0vY,Si3N4SiO2TH,(SiH49F709v,sY6.51011/cm22.01012/cm2。0.1%HFKSiO2/SiFV, 0.3 nmK,BSiH48LPCVDE,V(2.07.5 nmSi0。,1000/,PSi0V$4525382000M9(2.7 nm)。0A(AFM)V,0r1011/cm2,69 nm。;?;(PL)V,i/?Vn;2 。2.2InAs0K*LC01F3B80,InAs/GaAsInAs/InP0-。Frigeri0MBE(ALMBE)EGaAs(100)3i/o1.3mInAs0 3 。0,y0bW9F79F,0j(zi;.?4。MBEE,GaAs(100)455InAs1.8(ML)/,315 50 nm、1011/cm2InAs0;73500、InAs2.7 MLH,0Kv100 nm5。%8MBE(SSMBE)E,GaAs3(300 500)InAs3ML/,3InAs0。0$32AlAs/GaAsGaAs=。i(TEM)V,0H86 。MBEE,(100)_(010)GaAs3、(zInAs0,|_0;?Y,_;M,InAs0;i/210 A/cm2 7 。L?C,|_0j、/(Y,InP(311)B3InAs0(8 nm,z40 nm,51010/cm2,7InP(100)3InAs0(16 nm,z70 nm,5109/cm28 。2.3InGaN0BF0V;,;8;iv;9m。;B1s9mg ,;qgZ1,#;Yd1pg;。m10、LWs9mn?)1。mVn,n?)f/,0g0Wg10,0Lg3。m10、0L0Ws9mn?)1MOCVDEdA_3/,GaN0!InGaN09 。3ZEJ(TMGa)、J(TMIn)NH3,MOCVDEF3GaN,0?ETdA,0(FIB)E7Z3g。N$,31050/,3gjGaN,750/,GaN3InGaN0。K,InGaN0,13100 nmGaN。TZE?3pInGaN0,iO0j(?Fe。InGaN0(SEM)m2U。4625382000M92.4InGaAs0(SSMBE)E(100)Z_4nGaAs,p-i-n。cSiGaAs,In0.5Ga0.5As0,In0.1Ga0.9Asm2InGaN0SEMIn0.1Al0.9As,GaAs。?;(EL)V,In0.1Ga0.9As0?;1GaAsIn0.1Ga0.9As0?;110 。AlGaAs3InGaAs0T;,63 A/cm2 11 。MBEE,(100)_(110)|_2Si(100)n53GaAs,310AlAs/GaAs,K38MLIn0.4Ga0.6As012。01.21011/cm2,T?;=5(LED),300 K/Kvq3 mW,17 K/1.4 mW。3量子线材料3.1InGaAs0LMBEE(553)B|_GaAsT,3B+,(In0.15Ga0.85As0L13 ,5105/cm,PLor864 nm。Zv8|0_3,V70L。ZETZEe,1MP|_,1+yF/14 。TZE(100)_(111)A(111)B|2 6GaAs,MOVPEE3AlAs/GaAs,8V(00GaAs)00,TInGaAs0L。GaAs)00InGaAs0Lm3U。0L;=5(LD),LD77 K/o1.0 m,VMIncZEeo。3.2,5,5(carbon nanotube)BB?,F0w75,5+,+E,5C+,。05=_sK,VC0K
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