成都理工大学硕士学位论文基于慢正电子束流技术制备SiO薄膜的应用姓名：张子良申请学位级别：硕士专业：核技术及应用指导教师：侯新生;王宝仪20100501摘 要 I 基于慢正电子束流技术制备 SiO2薄膜的应用 作者简介：张子良，男，1984 年 7 月生，师从成都理工大学侯新生教授，2010 年 6月毕业于成都理工大学核技术及应用专业，获得工学硕士学位。 摘摘 要要 目前发展的有序介孔材料，由于它具有如下的特征： （1）具有规则的孔道结构； （2）孔径分布窄，且在 250nm 之间可以调节； （3）比表面积大;(4)具有很好的热稳定性； （5）颗粒具有丰富多彩的外形。自 1992 年首次合成以来，它在大分子催化、吸附和分离、传感器、微器件以及光、电磁等功能材料的研究和应用。因此一经诞生便引起了国际物理学、化学及材料学界的高度关注，并得到迅猛发展，成为跨学科的研究热点之一。虽然二氧化硅薄膜材料的制备工艺已有了大规模的发展，但是市场上对各种器件的要求程度越来越高，而不同二氧化硅薄膜的结构可以影响器件的性能，通过不同手段来改变二氧化硅的结构，就可以使得它的应用前景空前扩大。材料的制备和研究是其关键之一，所以研究一种新的制备方法，对日新月异发展的半导体来说尤为重要。 自 2008 年加入高能物理研究所正电子组以来,对本组人员自行设计和建立的基于22Na 源的慢正电子强束流装置进行了调试、维护以及对外开放运行。在慢正电子束流应用方面，利用这种实验方法的优点，开展了涉及领域较为广泛的应用研究。同时对二氧化硅薄膜材料进行了制备和性能研究。本论文将分为两部分，主要介绍二氧化硅薄膜材料的制备及表征，以及慢正电子束流装置的调试和测量分析工作。 本工作利用磁控溅射和溶胶凝胶方法制备二氧化硅薄膜，并与电辅助自组装制备介孔二氧化硅薄膜的方法进行了对比，结果表明电辅助自组装是一种可行的制备SiO2薄膜的方法。 本研究工作对不同SiO2薄膜的制备工艺进行研究，结合结构表征，做了深入的探讨。主要介绍了介孔二氧化硅薄膜的制备方法和表征手段， 尤其对溶胶-凝胶法制备有序介孔 SiO2薄膜做了较为深入地研究， 探讨了成膜机制；同时利用电辅助自组装法（EASA）制备有序介孔 SiO2薄膜，研究了反应物的配比、模板剂的加入量、溶液的 PH 值、反应溶液、薄膜的沉积时间、退火温度和保温时间等因素对 SiO2薄膜孔洞结构和成膜质量的影响。利用扫描电子显微镜（SEM） 、X 射线衍射（XRD）以及慢正电子湮没等方法表征了介孔 SiO2薄膜的孔洞结构和晶体类型等。 成都理工大学硕士学位论文 II 正电子谱学技术在材料科学中应用极为重要，已经发展成为研究物质微观结构的一种重要的核分析手段。基于本实验室所建立的谱学装置和正电子谱学技术，利用高能物理研究所自行设计和建立的22Na 慢正电子束流装置开展了涉及领域较为广泛的应用研究及慢正电子束流装置的调试、维护运行工作。 关键词：SiO2薄膜 电辅助自组装 磁控溅射 溶胶-凝胶 慢正电子束流Abstract III Based on slow positron beam and the applications of Preparation SiO2 film Introduction of the author: Zhangziliang, male, was born in July, 1984 whose tutor was Professor Houxinsheng . He graduated from Chengdu University of Technology in nuclear technology major and was granted the Master Degree in June, 2010. Abstract There are the following characteristics with the current development of ordered mesoporous materials: (1) pore structure with rules; (2) narrow pore size distribution, and there could be adjusted between 2 and 50 nm; (3) large surface area; ( 4) has good thermal stability; (5) particles with a variety of shape. There are used in macromolecular catalysis, adsorption and separation, sensors, micro-devices and light, and electromagnetic functional materials since the first synthesis in 1992. Therefore, There are having been aroused international physics, chemistry and materials of high academic attention and been the rapid development of interdisciplinary research focus. Although the silica of preparation has been large-scale development, it is becoming more and more in the market demand for various devices, different silica structures can change the device performance,you can make it unprecedented expansion prospects by different means to change Dioxide silicon structure. Preparation and study are one of the keys, so the preparation of a new method is particularly important with the rapid development of the semiconductor I have been debugging, maintenance Slow Positron Beam Application which is based on 22Na source by our team designed and built and also to run for users, since joined the Institute of High Energy Physics positron group in 2008.We carried out more extensively involved in the applied research,and also carried out and properties of silicon dioxide film,which based on the advantages of this experimental approach in the Application of Slow Positron Beam, This paper will introduce the two parts of preparation and characterization of silica dioxide thin films and also debugging and measurement analysis of the Application of Slow Positron Beam. The silicon dioxide film was prepared by several common methods, but also prepared by Electro-assisted Self-assembly and compared these methods , 成都理工大学硕士学位论文 IV Electro-assisted Self-assembly is a viable method of preparation of SiO2 thin films, This study focuses on the structure of prepared the SiO2 films by different methods and the method of preparation of thin films were discussed. The synthesis and characterization of mesoporous SiO2 film were introduced in this thesis. The microstructure and performances of ordered mesoporous SiO2 film fabricated by sol-gel method were investigated, and the film formation mechanism was discussed. According to the reported Electro-assisted Self-assembly method, we successfully prepared a series of mesoporous SiO2 film. With changing of the reactant ratio, film preparing method, deposit times of sol and film, annealing condition, the influences of the template quality, pH value, deposit times of the sol and film, annealing temperature and heat preservation time on porous structure and film qualities of SiO2 film were studied. The pore structure and the crystalline category of SiO2 film were identified with SEM, XRD, and positron annihilation technique. Positron spectroscopy applications is extremely important in materials science,it has become an important the nuclear analysis methods of material micro structure. based on the our laboratory spectroscopy devices and positron spectroscopy techniques, using of high energy physics designe and build of 22Na slow positron beam equipment to carried out involving the wider field of applied resear