中 文 摘 要 透明屏蔽材料是一类兼具透光性和电磁屏蔽性能的优良材料。其中薄膜型的透明屏蔽材料以其透光性好， 外表美观， 无绕射干扰的优点， 在 EMI/EMC 及 TEMPEST领域有着广泛的应用前景，但同时也存在屏蔽频段宽度窄，屏蔽效能较低的不足。因此，如何得到宽频段，高效能的透明屏蔽薄膜材料，是该领域中长期研究的重点。 本文研究采用磁控溅射法在玻璃衬底上制备氧化铟锡(ITO)透明屏蔽薄膜。所用的靶材是高纯度(99.99%)的氧化铟锡(wt.90%In2O3+wt.10%SnO2)陶瓷靶。采用扫描电子显微镜(SEM)、X 射线衍射仪(XRD)、X 射线能谱仪(EDS)、膜厚测试仪、四探针电阻测试仪、屏蔽效能测试等试验手段对沉积的薄膜样品进行表征，结论如下： (1)薄膜透明屏蔽性能与衬底温度、溅射氧气压，薄膜厚度密切相关。在衬底温度 350，氧氩比 0.5/50 时获得的薄膜性能最好；ITO 薄膜样品的 SEM 表明，样品表面较平整，且晶粒也比较致密；薄膜透光率超过 80%，电阻率低至 1.1710-4cm。 (2)随薄膜厚度增加，透光率下降而屏蔽效能上升。薄膜的厚度在 200nm 时，薄膜的屏蔽效能在 150KHz10GHz 全频段内超过 20dB，屏蔽效能的峰值达到 50dB 左右，且透光率 88%，具有较好的透光屏蔽性能。 (3)衬底单面沉积 ITO/SiO2/ITO 薄膜、衬底双面沉积均沉积 ITO 薄膜、衬底单面沉积单层 ITO 薄膜，三种情况 ITO 总厚度相同。多层薄膜由于界面散射增多，透光率比单层镀膜低一些；多层镀膜由于界面反射损耗的增加，起到增加屏蔽效能的作用。 关键词：关键词：ITO 薄膜；磁控溅射；电磁屏蔽；屏蔽效能；透光率 ABSTRACT Transparent-Shielding material is one kind of excellent material that has transparent and electromagnetic shielding properties at the same time. Thin film transparent-shielding material has a broad application prospects because of its advantage that has high transmittance, exterior appearance, non-diffraction interference. So how to acquire high performance transparent-shielding film is the focus of study now. ITO transparent-shielding film was prepared by DC matron sputtering on float glass substrates. Using an high-purity (99.99%) ITO ceramic target (wt.90%In2O3+wt.10%SnO2). The films were figured by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray energy dispersive spectrometer (EDS), thickness tester, four-probe resistance tester, shielding effectiveness testing. It was concluded that： (1) Transparent shielding performance is closely related to substrate temperature、sputtering pressure of oxygen and film thickness. Film of best performance was obtained when substrate temperature at 350 , argon-oxygen ratio at 0.5/50； SEM of ITO samples showed that the surface of the sample was leveled off, and the crystals were felsitic; Transmittance of ITO is more than 80%, resistivity is as low as 1.17 10-4 cm. (2) With the film thickness increased, the transmittance rate declined as shielding effectiveness increased. when film thickness is 200nm, shielding effectiveness is beyond 20dB at 150KHz10GHz frequency bands, and the peak value reached about 50dB,transminttance is 88%, film has a good transparent-shielding properties. (3)ITO/SiO2/ITO film single-sided deposition on substrate、ITO film double-sided deposition on substrate、ITO thin film single-sided deposition on substrate, three cases had the same total ITO thickness. Transmittance of ITO multilayer films is lower than single-layer coating due to interface scattering increased; in multi-layer ITO thin films, shielding effectiveness increased as interface reflective loss increase. KEY WORDS: ITO films ； Magnetron sputtering ； Electromagnetic shielding；Shielding effectiveness； Transmittance 目 录 第一章第一章 绪论绪论.1 1.1 引言.1 1.2 透明屏蔽材料研究现状.1 1.2.1 透明屏蔽材料分类.1 1.2.2 薄膜型透明屏蔽材料.2 1.2.3 互穿网络结构型透明屏蔽材料.3 1.2.4 两种透明屏蔽材料的比较.4 1.3 透明屏蔽 ITO 薄膜的制备方法.5 1.3.1 磁控溅射法.5 1.3.2 溶胶凝胶法.6 1.3.3 脉冲激光法(PLD).6 1.3.4 化学气相沉积法,.8 1.3.5 真空蒸发法.8 1.4 选题的目的和意义.9 1.5 论文研究的目标和主要内容.9 1.6 本章小结.10 第二章第二章 ITO 薄膜基本理论及结构性能表征薄膜基本理论及结构性能表征.11 2.1 ITO 薄膜基本理论. 11 2.1.1 ITO 薄膜的结构 .