XB5353A _ XySemi Inc - 1 - REV0.1 One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION The XB5353 series product is a high integration solution for lithium- ion/polymer battery protection. XB5353 contains advanced power MOSFET, high-accuracy voltage detection circuits and delay circuits. XB5353 is put into an ultra-small SOT23-5 package and only one external component makes it an ideal solution in limited space of battery pack. XB5353 has all the protection functions required in the battery application including overcharging, overdischarging, overcurrent and load short circuiting protection etc. The accurate overcharging detection voltage ensures safe and full utilization charging. The low standby current drains little current from the cell while in storage. The device is not only targeted for digital cellular phones, but also for any other Li-Ion and Li-Poly battery-powered information appliances requiring long- term battery life. FEATURES Protection of Charger Reverse Connection Protection of Battery Cell Reverse Connection Integrate Advanced Power MOSFET with Equivalent of 54m RDS(ON) Ultra-small SOT23-5 Package Only One External Capacitor Required Over-temperature Protection Overcharge Current Protection Two-step Overcurrent Detection: -Overdischarge Current -Load Short Circuiting Charger Detection Function 0V Battery Charging Function - Delay Times are generated inside High-accuracy Voltage Detection Low Current Consumption - Operation Mode: 2.8A typ. - Power-down Mode: 0.1A max. RoHS Compliant and Lead (Pb) Free APPLICATIONS One-Cell Lithium-ion Battery Pack Lithium-Polymer Battery Pack Figure 1. Typical Application Circuit XB5353A _ _ XySemi Inc - 2 - REV0.1 ORDERING INFORMATION PART NUMBER Pack age Overcharg e Detection Voltage VCU (V) Overcharge Release Voltage VCL (V) Overdischarge Detection Voltage VDL (V) Overdischarge Release Voltage VDR (V) Overcurrent Detection Current IOV1 (A) Top Mark XB5353A SOT 23-5 4.30 4.10 2.40 3.0 3 5353AYW(note) Note: “YW” is manufacture date code, “Y” means the year, “W” means the week PIN CONFIGURATION Figure 2. PIN Configuration PIN DESCRIPTION XB5353 PIN NUMBER PIN NAME PIN DESCRIPTION 1 V T Test pin；only for vendor not used by application 2 GND Ground, connect the negative terminal of the battery to this pin 3 VDD Power Supply 4,5 VM The negative terminal of the battery pack. The internal FET switch connects this terminal to GND ABSOLUTE MAXIMUM RATINGS (Note: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect device reliability.) PARAMETER VALUE UNIT VDD input pin voltage -0.3 to 6 V VM input pin voltage -6 to 10 V Operating Ambient Temperature -40 to 85 C Maximum Junction Temperature 125 C XB5353A _ _ XySemi Inc - 3 - REV0.1 Storage Temperature -55 to 150 C Lead Temperature ( Soldering, 10 sec) 300 C Power Dissipation at T=25C 0.4 W Package Thermal Resistance (Junction to Ambient) JA 250 C/W Package Thermal Resistance (Junction to Case) JC 130 C/W ESD 2000 V ELECTRICAL CHARACTERISTICS Typicals and limits appearing in normal type apply for TA = 25oC, unless otherwise specified Parameter SymbolTest Condition Min Typ Max Unit Detection Voltage Overcharge Detection Voltage VCU 4.25 4.30 4.35 V Overcharge Release Voltage VCL 4.05 4.10 4.15 V Overdischarge Detection Voltage VDL 2.3 2.4 2.5 V Overdischarge Release Voltage VDR 2.9 3.0 3.1 V Charger Detection Voltage VCHA -0.07 -0.12 -0.2 V Detection Current Overdischarge Current1 Detection IIOV1 VDD=3.5V 2.1 3 3.9 A Load Short-Circuiting Detection ISHORT VDD=3.5V 10 20 30 A Current Consumption Current Consumption in Normal Operation IOPE VDD=3.5V VM =0V 2.8 6 A Current Consumption in power Down IPDN VDD=2.0V VM pin floating 0.1 A VM Internal Resistance Internal Resistance between VM and VDD RVMD VDD=3.5V VM=1.0V 320 k Internal Resistance between VM and GND RVMS VDD=2.0V VM=1.0V 100 k FET on Resistance Equivalent FET on Resistance RDS(ON)VDD=3.6V IVM =1.0A 54 63 m Over Temperature Protection Over Temperature Protection TSHD+ 120 Over Temperature Recovery Degree TSHD- 100 oC XB5353A _ _ XySemi Inc - 4 - REV0.1 Detection Delay Time Overcharge Voltage Detection Delay Time tCU 130 200 mS Overdischarge Voltage Detection Delay Time