Symbol VDS VGS IDM TJ, TSTG SymbolTypMax 6590 85125 RJL4360 W Maximum Junction-to-Lead C Steady-StateC/W Thermal Characteristics ParameterUnits Maximum Junction-to-Ambient A t 10s RJA C/W Maximum Junction-to-Ambient A Steady-State C/W 12Gate-Source Voltage Drain-Source Voltage-30 Continuous Drain Current A MaximumUnitsParameter TA=25C TA=70C Absolute Maximum Ratings TA=25C unless otherwise noted V V -3.5 -30Pulsed Drain Current B Power Dissipation A TA=25C Junction and Storage Temperature Range A PD C 1.4 1 -55 to 150 TA=70C ID -4.2 PL3401 P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON) 50m (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) RDS(ON) 120m (VGS = -2.5V) General Description The PL3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product PL 3401 is Pb-free (meets ROHS & Sony 259 specifications). S G D TO-236 (SOT-23) Top View G D S PL3401(A19T) 联系供应商 郑生：18948314942 QQ:1094642907 / 2851339685 PL3401 SymbolMinTypMaxUnits BVDSS-30V -1 TJ=55C-5 IGSS100nA VGS(th)-0.7-1-1.3V ID(ON)-25A 4250 TJ=125C75 5365 m 80120 m gFS711S VSD-0.75-1V IS-2.2A ISM-30A Ciss954pF Coss115pF Crss77pF Rg6 Qg9.4nC Qgs2nC Qgd3nC tD(on)6.3ns tr3.2ns tD(off)38.2ns tf12ns trr20.2 ns Qrr11.2nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Gate resistanceVGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Pulsed Body-Diode Current B IF=-4A, dI/dt=100A/s VGS=0V, VDS=-15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS=-4.5V, VDS=-15V, ID=-4A Gate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=3.6, RGEN=6 m VGS=-4.5V, ID=-4A IS=-1A,VGS=0V VDS=-5V, ID=-5A RDS(ON)Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSSA Gate Threshold VoltageVDS=VGS ID=-250A VDS=-24V, VGS=0V VDS=0V, VGS=12V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25C unless otherwise noted) STATIC PARAMETERS ParameterConditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/s Drain-Source Breakdown Voltage On state drain current ID=-250A, VGS=0V VGS=-2.5V, ID=-1A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.2A Reverse Transfer Capacitance A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any a given application depends on the users specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev5: Dec.2006 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.00 5.00 10.00 15.00 20.00 25.00 0.001.002.003.004.005.00 -VDS (Volts) Fig 1: On-Region Characteristics -ID (A) VGS=-2V -2.5V -3V -4.5V -10V 0 2 4 6 8 10 00.511.522.53 -VGS(Volts) Figure 2: Transfer Characteristics -ID(A) 20 40 60 80 100 120 0.002.004.006.008.0010.00 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage RDS(ON) (m ) 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 0.00.20.40.60.81.01.2 -VSD (Volts) Figure 6: Body-Diode Characteristics -IS (A) 25C 125C 0.8 1 1.2 1.4 1.6 1.8 0255075100125150175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Normalized On-Resistance VGS=-2.5V ID=-3.5A, VGS=-10V ID=-3.5A, VGS=-4.5V 10 30 50 70 90 110 130 150 170 190 0246810 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage RDS(ON) (m ) 25C 125C VDS=-5V VGS=-2.5V VGS=-4.5V VGS=-10V ID=-2A 25C 125C ID=-1A PL3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 1 2 3 4 5 024681012 -Qg (nC) Figure 7: Gate-Charge Characteristics -VGS (Volts) 0 200 400 600 800 1000 1200 1400 051015202530 -VDS (Volts) Figure 8: Capacitance Characteristics Capacitance (pF) Ciss 0 10 20 30 40 0.0010.010.11101001000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note E) Power (W) 0.01 0.1 1 10 0.000010.00010.0010.010.11101001000 Pulse Width (s) Figure 11: Normalized Maximum Tra