OLED TechnologyDavid HsiehContents OLED Development Status Key Milestone Resolution vs. Size AM and PM Development Display Materials Status : Polymer vs. Small Molecule Efficiency Progress Lifetime Progress Tech. Status of OLED Color patterning Pending Issues in OLED Out-coupling Efficiency Lifetime Differential Aging LTPS Non-Uniformity for AMOLEDConclusionOLED Develooment Status Key Milestone of OLED Development1995199920002002Pioneer, PM-95一甲-sse - siPioneer, PM, 4 AreaColor-99Motorola CellularPhone -00Sony 13 SVGAAMOLED -01CDT-Seiko Epson 25 AMPLED-005.7PM-OELDldemistu-97Sanyo-Kodak24 AMOLED-99Samsung 15 XGAAMOLED -01Kodak Digital Camera-03Chi-Mei & IBM 20 WXGA a-SiAMOLED -03OLED Develooment Status PM Commercialized DisplaysPM Mobile Phone (Small Molecule)6工4G；、2 093.Motorolla (Pioneer)Samsung (SNMD)LG (Pioneer)OLED Development Statusin Next Product Samsung NEC Mobile Display (SNMD) PM OLED Productsin Current Product 1.1H 94x 64 Dots, 256 Color Anycall (SEC) Sub Display Mass Production from 2002. JulyAoDlications of OLED* S/M : Small Molecjle Next Step Cell phones (main display) PDAs Small video (DVC,DSC)MobileFull ColorPM OLEDMobile S/M*AM OLEDLarge S/M*)，Polymer / AM OLEDFlexible PolymerAM OLEDMobile MonoPM OLED Now & Near-term Cell phones (sub display) Auto displays audio, meters, appliances Final & Long Term Mobile Applications (Flexible) MonitorsTVsPassive Matrix Displays: Process Flow(380x470 1 glassITOCr panels start )Glass Clean &BakeAZ5214 Bus Metal PR Coat & Bake*Bus Metal PR Thickness (1.7 pm)Bus Resist Expose (Mask #DBus Resist Develop4Bus CD & InspectBus Etch and Inspect4Bus PR Strip. Inspect & CDDehydration BakeA.LITO PR Coat and Bake 4ITO PR Thickness (1.7 pin )ITO Resist Expose (Mask # 2) 4ITO Resist Develop 4ITO CD and Inspect,prITO Etch and Inspect 4ITO PR Strip, Inspect & CD 4Dehydration Bake 4AZ5206-E Base PR Coat and Bake 4Base PR Thickness (0.6 Ri】)JBase Resist Expose (Mask #3)Base Resist DevelopBase CD and Inspect4Base Cure-Hot PlateAZ5214 Pillar PR Coat & BakePillar PRPillar PRThickness Expose(1.7- 3.7 pin )(Mask # 4) Pillar PR Post k ContinueExposure Bake z_-Passive Matrix Displays: Process Flow (continued)Pillar PR FloodExposurePillar PRDevelopPillar CD andInspectElectron Transport Layer(2 mins)4Electron Injection Layer (0.83 min)4Cathode (0.83 mins)4EncapsulationCover CleanDesiccantDispenseA登ASeal Epoxy Dispense4LaminationUV Cure4Post Cure BakeScribe & Break to final size.Probe Test: O/S,Log Jrb, Lum,CIEAssemblyFinal Test.Outgoing QCSample: Aging/Fade TestShipProcess Specifications: PhotoSubstrates: GlassITOMo-Ta Glass: 380 x 470, 0.7 IW.03 mm, no visible defects under 10 K lux ITO: 20-30 Ohms/square, 750 HJ75 A, 85% Transmission at 400 to 760 nm,Roughness 50 A, Max. Peak Height 200 A. Bus Metal: 95% (zone sublimed/purified) Metals: Purity 90%Encapsulation Epoxy Seal: + 0.5 Water absorption when boiled for two hrs, less than 5.0 g/m2 water permeability for 24 hrs, 40 |ig/g outgas trapping 120 C x 15 mins.Facility: Class 100 Clean RoomITO: The minimum gap between ITO conductors shall be 12.5 pm, the minimum leakage resistance between neighboring ITO lines shall be 1 Mohm.Base: Thickness: 0.5 to 0.6 pm 12 (VGA) to 4 pm (mono) Spin Speed 3000 RPM Soft Bake 90 / 90 secs Hard Bake 250 / 200 secsPillar: Thickness 4 |im 8 (VGA) to 12 |im (mono) Spin Speed 3000 RPM Retrograde Angle -45/70 Minimum linewidth at 45 / 70 C - 12/8(im UV Cure 90 mJ/cm2, 200 to 400 nm / 90 secs 110Process Specifications: Thin FilmsVacuum Levels: Buffer Chamber1E-6 Torr Organic Chamber(s)5E-7 Torr Electrode6E-6 Ton,Deposition Rates/T emperatures: Organics2 - 4 A/sec