DRAM Architecture1.1.0.16um 0.16um DRAM ConceptDRAM Concept第1页/共25页第一页，共26页。DRAM Cell OperationWrite (“1”):Bitline (Vcc)Wordline (1.5Vcc)CapacitorVrefRead:Wordline (1.5Vcc)CapacitorVrefBitline (1/2Vcc)Bitline (1/2Vcc)SA“1” or “0”QQ第2页/共25页第二页，共26页。 DRY ETCH (Oxide/Silicon)* ASH Zero MARK AEI Zero MARK DEPTH ProfilePERIPHERAL CROSS SECTION Wafer Start Zero MARK OX Zero MARK Photo MARKPR2 2. . 0.16um 0.16um DRAM Process FlowDRAM Process Flow- Zero Mark*- Zero Mark*第3页/共25页第三页，共26页。AA Oxide Growth AA SiN Dep. AA Photo AA Photo CD AA ADI AA Dry ETCH* AA ASH AA Post-clean AA ETCH CD AA Depth0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-STI*-STI*CELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTIONPRE- OXIDE SiN SiN SiNPRE- OXIDESTISTISTISTISTI Profile & Defect第4页/共25页第四页，共26页。PRE- OXIDESTISTISTIPRE- OXIDESiNSiNHDP Gap Fill0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-AA DEP and CMP-AA DEP and CMP STI HDP Dep. STI CMP STI SiN RemovalPRE- OXIDESiNSiNHDP Gap Fill第5页/共25页第五页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-N-Well-N-WellSTI SAC Oxidation N-Well Photo N-Well Overlay N-Well ADICELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTIONP-TYPE SUBSTRATESTISTISTI N-Well IMP N-Well ASH N-Well AEIN-WellPRPRSTI第6页/共25页第六页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-P-Well-P-Well P-Well Photo P-Well Overlay P-Well ADI P-Well IMP P-WELL ASHSTICELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTIONP-TYPE SUBSTRATESTISTISTIN-WellPRPRSTIP-Well第7页/共25页第七页，共26页。 CELL ASH Cell AEI0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-Cell N-Well-Cell N-Well Cell Photo Cell Overlay Cell N-Well IMP Cell P-Well IMPSTICELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTIONSTISTISTIN-WellPRSTIP-WellN-WellP-Well第8页/共25页第八页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )- P1 Gate*- P1 Gate* P1 Gate Oxidation P1 Poly Dep. P1 WSi Dep. P1 ARC P1 SiN P1 Photo (Q-time) Pl Overlay P1 ADI CD Dummy P1 NIT Etch (Q-time) P1 POLY Etch * P1 ASH P1 Post-clean P1 ROX THK P1 AEI CD PRPRPRPRPRPRSTICELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTIONSTISTISTIN-WellSTIP-WellN-WellP-Well Profile & Defect第9页/共25页第九页，共26页。 SP SiN Etch SP Post Etch CLN SP Ox. SP SiN Dep. 0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-Spacer-SpacerSTICELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTIONSTISTISTIN-WellSTIP-WellN-WellP-Well第10页/共25页第十页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-PMOS IMP-PMOS IMP P+ S/D ADI P+ S/D IMP P+ ASH P+ S/D AEIPRPRSTICELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTIONSTISTISTIN-WellSTIP-WellN-WellP-Well S/D OX P+ S/D Photo P+ S/D Overlay 第11页/共25页第十一页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-NMOS IMP-NMOS IMP N+ S/D Photo N+ S/D Overlay N+ S/D ADI N+ S/D IMP N+ ASH N+ S/D AEIPRPRSTICELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTIONSTISTISTIN-WellSTIP-WellN-WellP-WellPR第12页/共25页第十二页，共26页。 C1 Photo C1 Overlay C1 CD C1 ADI C1 Etch C1 SiN Dep. C1 BP-TEOS C1 BP-TEOS CMP0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-C1-C1 C1 ASH C1 Si-RECESS ETCH C1 AEI CD C1 AEIPRSTICELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTIONSTISTISTIN-WellSTIP-WellN-WellP-Well第13页/共25页第十三页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-C2-C2 C2 ADI CD C2 ADI C2 Etch C2 AEI CD C2 BP-TEOS C2 Photo C2 Overlay P2P2P2PRCELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTIONSTISTIN-WellSTIP-WellSTISTIN-WellP-Well P2 CMP P2 CMP THK P2 Poly Dep. 第14页/共25页第十四页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-R-poly-R-poly ONO SiN Pre-clean ONO SiN Dep. ONO SiN OX P3 Pre-clean P3 Dep. R-Poly Dep. R-Poly CMPCELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTIONN-WellP-WellCellP2P2P2STISTISTISTISTI第15页/共25页第十五页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-Poly4-Poly4CELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTION P4 Photo P4 Overlay P4 ADI CD P4 Etch P4 ASH P4 AEI CD P4 Dep. N-WellP-WellCellP2P2P2STISTISTISTISTI第16页/共25页第十六页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-CT1 & CT2-CT1 & CT2N-WellP-WellCellP2P2P2CT1CO2CO2CELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTION CT2 Etch CT2 ASH CT2 CD CT2 AEI CT2 Photo CT2 Overlay CT2 CD CT2 ADICT2CT2CT2STISTISTISTISTI CT1 Overlay CT1 CD CT1 ADI CT1 Etch CT1 ASH CT1 CD CT1 BP-TEOS Dep. CT1 Photo 第17页/共25页第十七页，共26页。 M1 ARC M1 ASH0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-Metal 1-Metal 1CELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTION M1 Ti / TiN M1 W-CVD N-WellP-WellCellP2P2P2ILDSTISTISTISTISTI M1 Photo M1 Overlay M1 CD M1 ADI M1 Etch M1 ASH M1 CD-Etch M1 AEI第18页/共25页第十八页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-IMD1 &Via 1-IMD1 &Via 1CELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTION VIA1 Photo VIA1 Overlay VIA1 CD VIA1 ADI VIA1 Etch VIA1 CD VIA1 AEIN-WellP-WellCellP2P2P2V1IMD1STISTISTISTISTI IMD1 OX. IMD1 THK IMD1 CMP IMD1 Post CMP THK 第19页/共25页第十九页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-M2-M2CELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTION M2 Photo M2 Overlay M2 CD M2 ADI M2 Etch M2 ASH M2 CD M2 AEIN-WellP-WellCellP2P2P2IMD1STISTISTISTISTI M2 Ti/TiN M2 W-Plug M2 W-Plug CMP M2 AL Dep. (Ti/TiN/AlCu/TiN)第20页/共25页第二十页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-IMD2 &Via 2-IMD2 &Via 2CELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTION VIA2 Photo VIA2 Overlay VIA2 CD VIA2 ADI VIA2 Etch VIA2 ASH VIA2 CD VIA2 AEIN-WellP-WellCellP2P2P2V2IMD2IMD2STISTISTISTISTI IMD2 Ox. IMD2 THK IMD2 CMP IMD2 Post CMP THK第21页/共25页第二十一页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-M3-M3CELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTION M3 Photo M3 Overlay M3 CD M3 ADI M3 Etch M3 ASH M3 CD-Etch M3 AEIN-WellP-WellCellP2P2P2IMD2IMD2 M3STISTISTISTISTI M3 Ti/TiN M3 W-Plug M3 W-Plug CMP M3 AL Dep. (Ti/TiN/AlCu/TiN)第22页/共25页第二十二页，共26页。0.16um DRAM process flow ( Profile )0.16um DRAM process flow ( Profile )-Passivation-PassivationCELL ARRAY CROSS SECTIONPERIPHERAL CROSS SECTION Polymide Coat Polymide Coat ADI Polymide Photo Polymide ADI Polymide ASH WAT (Wafer Acceptance Test)FOXN-WellP-WellCellP2P2P2PIPIPIPASS-2PASS-2PASS-1PASS-1IMD2IMD1IMD2IMD1ILD29K29K7K10K12KPERIPHERAL CROSS SECTIONFOXN-WellP-WellPASS-2PASS-1 M3CellP2P2P2PASS-2PASS-1STISTISTISTISTI PA1 HDP OX PA1 SiN PA1 Photo PA1 ADI PA1 Fuse OX Etch PA1 THK PA1 ASH PA1 Alloy 第23页/共25页第二十三页，共26页。THANK YOU第24页/共25页第二十四页，共26页。2024/7/2525感谢您的欣赏(xnshng)！第25页/共25页第二十五页，共26页。内容(nirng)总结DRAM Architecture。“1” or “0”。DRY ETCH (Oxide/Silicon)*。P1 Photo (Q-time)。N+ S/D AEI。CT1 BP-TEOS Dep.。M3 W-Plug CMP。第24页/共25页。感谢您的欣赏(xnshng)。第25页/共25页第二十六页，共26页。