Shanghai Tianma Micro electronics Co.,LtdLTPSLTPS工艺流程与技术工艺流程与技术AMOLEDAMOLEDZhao Ben GangZhao Ben GangSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.a-Si & LTPS, and processa-Si & LTPS, and processKey process of LTPSKey process of LTPS LTPS process flowLTPS process flow目录目录2SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.LTPSLTPS :Low Temperature Poly-Silicona-Si & LTPS, and process3SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.4SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.a-Si TFT& LTPS TFTa-Si TFT& LTPS TFT5SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.6SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.LTPS&OLEDLTPS&OLED7SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.8SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.+ doping9SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Key process of LTPS10SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.CVD技术技术11SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.12SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.去氢工艺去氢工艺去氢工艺去氢工艺去氢工艺去氢工艺去氢工艺去氢工艺: : 高温烘烤;快速热退火;高温腔体或低能量激光去氢FTIR检测氢含量检测氢含量13SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.缓冲层作用缓冲层作用:1.防止玻璃中的金属离子(铝,钡,钠等)在热工艺中扩散到LTPS的有源区,通过缓冲层厚度或沉积条件可以改善多晶硅背面的质量;2.有利于降低热传导,减缓被激光加热的硅冷却速率,利于硅的结晶14SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.SiO2, SiO2/SiNxSiO2, SiO2/SiNx15SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.四乙氧基硅烷 16SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.n n high costhigh cost17SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.TEOS oxide具有低针孔密度，低氢氧含量，良好的台阶覆盖性。18SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.SiNx:SiNx: 1.1.具有高的具有高的具有高的具有高的击击穿穿穿穿电压电压特性特性特性特性 2.2.具具具具备备自自自自氢氢化修化修化修化修补补功能功能功能功能 3.3.与与与与多晶硅的界面存在多晶硅的界面存在多晶硅的界面存在多晶硅的界面存在过过多的缺陷和陷多的缺陷和陷多的缺陷和陷多的缺陷和陷阱阱阱阱，易，易，易，易产产生生生生载载流子捕流子捕流子捕流子捕获获缺陷和缺陷和缺陷和缺陷和 阈值电压阈值电压漂移，可通漂移，可通漂移，可通漂移，可通过过SiO2/SiNxSiO2/SiNx克服克服克服克服绝缘层选择绝缘层选择广泛应用于非晶硅栅绝缘层SiO2:SiO2: 1.1.台阶覆盖性台阶覆盖性台阶覆盖性台阶覆盖性 2.2.与多晶硅界面匹配与多晶硅界面匹配与多晶硅界面匹配与多晶硅界面匹配, , 应力匹配应力匹配应力匹配应力匹配19SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.一般采用一般采用一般采用一般采用SiNxSiNx，SiO2,SiO2,而而而而SiO2/SiNxSiO2/SiNx结构可以得到良好的电学特性，和氢化效结构可以得到良好的电学特性，和氢化效结构可以得到良好的电学特性，和氢化效结构可以得到良好的电学特性，和氢化效果果果果20SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.21SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.结晶技术结晶技术22SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.ELA (Excimer Laser Annel)ELA (Excimer Laser Annel)Sony公司提出，现在大部分多晶硅TFT公司采用line beam工艺。Line Beam Scan mode现在技术：XeF 23SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Partially melting regimeNear-complete melting regimeMechanism of ELAMechanism of ELAComplete melting regime24SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.晶化效果晶化效果a-SiP-Si25SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.离子注入技术离子注入技术V族元素(P ,As, Sb)III族元素(B, Al, Ga)提供电子,形成N型半导体提供空穴,形成P型半导体半导体掺杂半导体掺杂半导体掺杂半导体掺杂: :PH3/H2,B2H6/H2PH3/H2,B2H6/H226SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.离子注入机离子束呈细线状或点状,难以得到大的电流束,采取扫描方式注入,产能低;通过质量分析装置控制注入剂量,均匀度2%离子云注入机离子束线状, 电流束较长, 产能较高,成本低;通过法拉第杯控制注入剂量,均匀度5%27SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.LDDLDD方块电阻小于方块电阻小于方块电阻小于方块电阻小于10K10K欧姆欧姆欧姆欧姆/方块电阻方块电阻方块电阻方块电阻40K40K-100K100K欧姆欧姆欧姆欧姆/28SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.LDDLDD作用：作用：作用：作用：抑制抑制抑制抑制“ “热载热载流子效流子效流子效流子效应应” ” 以较低的注入量在源极/漏极端与沟道之间掺杂,形成一浓度缓冲区,等效串联了一个大电阻,水平方向电场减少并降低了电场加速引起的碰撞电离产生的热载流子几率 注入剂量过少则造成串联电阻过高,使迁移率下降;注入剂量过多则会失去降低漏极端边缘电场强度的功能.LDDLDD29SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.30SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Repair broken bonds damaged in ion doping Increase conductance of doping area31SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.qq氢氢化化化化处处理的目的理的目的理的目的理的目的 多晶硅晶粒间存在粒界态，多晶硅与氧化层间存在界面态，影响晶体管电性。氢化处理以氢原子填补多晶硅原子的未結合鍵或未飽和鍵，粒界态，氧化层缺陷，以及界面态，来减少不稳态数目，提升电特性：迁移率，阈值电压均匀性等。qq氢氢化化化化处处理方法理方法理方法理方法 1.等离子体氢化法：利用含氢的等离子体直接对多晶体和氧化层做 处理 2.固态扩散法：SiNx薄膜作为氢化来源，特定温度烘烤使氢原子扩散进入多晶体和氧化层 氢氢化工化工艺艺32SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.33SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.34SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.LTPS的主要的主要设备TEOS CVD激光晶化设备激光晶化设备离子注入机离子注入机快速热退火设备快速热退火设备ICP-干刻设备干刻设备HF清洗机清洗机PVD光刻机光刻机湿刻设备湿刻设备干刻设备干刻设备CVD共用产线设备LTPS设备35SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.OLED 蒸蒸镀镀封封装装离子注入机离子注入机AOI快速热退火快速热退火设备设备激光晶化设备激光晶化设备磨边清洗机磨边清洗机36SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.37LTPS-TNLTPS-OLEDLTPS-IPS2024/8/2138SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.GateActiveSDPassivationITO PixelPoly（多晶硅刻蚀）（多晶硅刻蚀）CHD（沟道掺杂）（沟道掺杂）M1 （gate层）层）ND（n+掺杂）掺杂）PD（ p+掺杂）掺杂）M2 （SD层）层）PV （passivation）Via 1（过孔（过孔1）RE（反射电极）（反射电极）PDL（像素定义层）（像素定义层）Spacera-Si 工艺工艺Via 2 （平坦化层）（平坦化层）Poly（多晶硅刻蚀）（多晶硅刻蚀）CHD（沟道掺杂）（沟道掺杂）M1 （gate层）层）ND（n+掺杂）掺杂）PD（ p+掺杂）掺杂）M2 （SD层）层）PV 2（passivation）Via 1（过孔（过孔1）ITO1Via 2 （平坦化层）（平坦化层）ITO2LTPS-IPSLTPS-OLED39SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.玻璃基板玻璃基板Glass玻璃投入清洗 LTPS process flow预处理40SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.沉沉积缓冲冲层有源层有源层GlassPECVD缓冲层+有源层有源层缓冲层去氢防止氢爆工工艺材料材料工工艺条条件件Remark缓冲层PECVD SiNx/SiO2有源层PECVD a-Si去氢PECVD heat chamber清洗41SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.多晶硅晶化多晶硅晶化Glass晶化多晶硅测量XRD,RAMAN,SEM,AFM,MIC,UV SLOPESpin clean工工艺材料材料工工艺条条件件RemarkSpin clean O3water、BHF、CO2water、H2waterELAXeF(351nm)42SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.P-Si刻刻蚀(mask1)Glass 光刻Driver areaPixel areaP-channelN-channel干刻P-Si去胶工工艺材料材料工工艺条条件件RemarkP-Si刻蚀p-Si450- 50043SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.P-Si刻刻蚀(mask1)Taper 4944SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.PR沟沟道道掺杂(mask2)B+P-channelN-channelChannel doping光刻补偿vth工工艺材料材料工工艺条条件件Channel doping1.B+掺杂 n沟道2.根据Vth结果，调整掺杂类型与区域Glass Driver areaPixel areaP-channelN-channel去胶45SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.沟道掺杂沟道掺杂46SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.PRN+ 掺杂(mask3)Glass P-channelN-channelPHX+工工艺材料材料工工艺条条件件remarkN+ dopingPHx+Ion implantingDose：11014 -51014(ion/ cm2)薄层电阻：103-104/PHOTO PR peelingN+ doping第3次光刻灰化去胶Driver areaPixel area47SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.N+ 掺杂(mask3)48SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.GATE InsulatorPECVD GIDriver areaPixel areaP-channelN-channel工工艺材料材料工工艺条条件件Spin cleanO3water、BHFGATEInsulatorPECVD SiO2(或SiO2/SiNx双层结构）Spin 清洗Glass 49SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.PRPRPRPRGate层（mask4）Glass Gate 成膜Driver areaPixel areaP-channelN-channel工工艺材料材料工工艺条条件件Spin cleanO3water、BHFGATEMoNbSpin 清洗光刻PR50SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Gate 刻刻蚀(干刻干刻)Driver areaPixel area工工艺材料材料工工艺条条件件Remark GATEMoNbGlass P-channelN-channelECCP干刻去胶51SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Gate 刻刻蚀(干刻干刻)Taper 53GI loss350ATaper 46GI loss0A52SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.LDD掺杂 GateGate掩膜掩膜PHX+LDD DopingLDD DopingP-channelN-channel工工艺材料材料工工艺条条件件厂厂商商LDDPHx+Ion implantingDose：11013 -51013(ion/ cm2)薄层电阻：104-105/LDDGlass Driver areaPixel area53SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.PR PRGlass B+ DopingP-channelN-channelP+ 掺杂(mask5)工工艺材料材料工工艺条条件件remarkP+ dopingB+Ion implantingDose：1014 -1015(ion/ cm2)薄层电阻： 103 -104/共4次掺杂：Channel doping、LDD、N+ doping、P+ dopingP+ doping第5次光刻灰化去胶Driver areaPixel area54SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.P+ 掺杂55SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.ILD成膜成膜与与活化（氢化）活化（氢化）Glass Driver areaPixel areaP-channelN-channelBHF清洗ILD成膜活化(氢化）工工艺材料材料工工艺条条件件厂厂商商ILD成膜 SiNx/SiO23000/3000，SiNx/(SiH4,NH3,N2)SiO2(SiH4,N2O)活化 (氢化）活化：600 1-3分钟氢化：380 -420，30分钟56SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Via1(mask6)Glass Driver areaPixel areaP-channelN-channel光刻ICP刻蚀去胶工工艺材料材料工工艺条条件件厂厂商商通孔刻蚀 SiO2/SiNx/SiO21000/3000/3000（ P-Si过孔深7000， gate 过孔深6000)57SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.通孔刻蚀通孔刻蚀58SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.通孔刻通孔刻蚀59SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.SD层(mask7)Glass Driver areaPixel areaP-channelN-channelBHF清洗SD成膜光刻ECCP干刻工工艺材料材料工工艺条条件件Remark SD成膜 Ti-纯Al-Ti PVD100/200 300/4000/700 台阶覆盖性，腐蚀问题，接触电阻,hillock;SD干刻Metal anneal 350 40min去胶Metal anneal60SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.PowerAr 成膜温度SD成膜成膜61SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.SD 干刻干刻62SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Passivation层(mask8)Glass Driver areaPixel areaP-channelN-channel清洗SiNx成膜光刻ICP or RIE工工艺材料材料工工艺条条件件Remark 平坦化层 SiNx(mask9) CVD200 3000RIE均可实现SiNx与Ti选择比去胶63SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Passivation层64SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.平坦化平坦化层(mask9)工工艺材料材料工工艺条条件件Remark 平坦化层 有机膜(mask10)Anneal后2.0um JSR PC405G清洗涂布有机膜光刻Glass Driver areaPixel areaP-channelN-channel65SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.平坦化层平坦化层LTPS（TN）LTPS-OLEDLTPS-IPS66SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.像素像素电极极清洗工工艺材料材料工工艺条条件件Remark 反射电极 ITOGlass Driver areaPixel areaP-channelN-channelITO镀膜67SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.电极极刻刻蚀(mask10)光刻去胶工工艺材料材料工工艺条条件件Remark 反射电极刻蚀 ITOITO:草酸ITO 残留CD loss退火湿刻Glass Driver areaPixel areaP-channelN-channelLTPS-TN array 完成68SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.反射反射电极极清洗Ag镀膜工工艺材料材料工工艺条条件件Remark 反射电极 ( ITOAg ITO) Ag: PVD400: 1000 ITO PVD400: 150 ITO:粗糙度与功函数,均匀性 ITO/Ag/ITO一次刻蚀Glass Driver areaPixel areaP-channelN-channelITO镀膜ITO镀膜69SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.电极极刻刻蚀(mask10)光刻去胶工工艺材料材料工工艺条条件件Remark 反射电极刻蚀 ( ITOAg ITO)ITO:草酸Ag:铝酸ITO 残留CD loss退火湿刻Glass Driver areaPixel areaP-channelN-channel70SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.电极刻蚀电极刻蚀(mask10)71SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.PDL/Spacer层(mask11/12)for OLED工工艺材料材料工工艺条条件件Remark PDL层spacer PIPDL层1.0-1.5umSpacer：1.5um PI材料，用两张mask实现，后续考虑用half tone maskGlass Driver areaPixel areaP-channelN-channel72SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.PDL/Spacer层(mask11/12)LTPS-OLED array 完成73SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.ITO1电极极清洗Glass Driver areaPixel areaP-channelN-channelITO1层74SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.PV2电极极清洗Glass Driver areaPixel areaP-channelN-channelSiNx75SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.ITO2电极极清洗Glass Driver areaPixel areaP-channelN-channelITO2layer76SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.CellCell工程工程ModuleModule工程工程信号基板驱动ICPanelBLULCDModule连接电路保护板検検 査査装配装配绑定绑定LCDPanel液晶滴下液晶滴下真空贴合真空贴合 切割切割CFTFT基板TFTTFT工程工程成成膜膜膜Glass基板PR塗布塗布曝曝光光Mask現像現像刻蚀刻蚀剥離剥離TFT基板重复Glass基板LCD工工艺77SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.OLED-CELL-MODULE process730*920mm365*460mm切割78SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Q&A79